Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Width
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Length
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.4V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 530,00
Katrs (Kaste ir 10) (bez PVN)
€ 641,30
Katrs (Kaste ir 10) (Ieskaitot PVN)
10
€ 530,00
Katrs (Kaste ir 10) (bez PVN)
€ 641,30
Katrs (Kaste ir 10) (Ieskaitot PVN)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Width
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Length
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Maximum Operating Temperature
+150 °C
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.4V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products