SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J

RS noliktavas nr.: 150-3965Ražotājs: WolfspeedRažotāja kods: C3M0120100J
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Width

9.12mm

Number of Elements per Chip

1

Forward Diode Voltage

4.8V

Height

4.32mm

Series

C3M

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

€ 17,30

Katrs (bez PVN)

€ 20,93

Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J
Izvēlēties iepakojuma veidu

€ 17,30

Katrs (bez PVN)

€ 20,93

Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 17,30
10 - 19€ 15,50
20 - 39€ 15,10
40+€ 14,80

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Width

9.12mm

Number of Elements per Chip

1

Forward Diode Voltage

4.8V

Height

4.32mm

Series

C3M

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more