SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J

RS noliktavas nr.: 150-3947Ražotājs: WolfspeedRažotāja kods: C3M0120100J
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Width

9.12mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Series

C3M

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

4.32mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 13,50

Katrs (Tubina ir 50) (bez PVN)

€ 16,335

Katrs (Tubina ir 50) (Ieskaitot PVN)

SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J

€ 13,50

Katrs (Tubina ir 50) (bez PVN)

€ 16,335

Katrs (Tubina ir 50) (Ieskaitot PVN)

SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 100€ 13,50€ 675,00
150 - 200€ 13,00€ 650,00
250+€ 12,70€ 635,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Width

9.12mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Series

C3M

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

4.32mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more