Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 8,90
Katrs (Tubina ir 30) (bez PVN)
€ 10,769
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 8,90
Katrs (Tubina ir 30) (bez PVN)
€ 10,769
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.