SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D

RS noliktavas nr.: 192-3523Ražotājs: WolfspeedRažotāja kods: C3M0075120D
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Height

21.1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 20,40

Katrs (bez PVN)

€ 24,68

Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D

€ 20,40

Katrs (bez PVN)

€ 24,68

Katrs (Ieskaitot PVN)

SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cena
1 - 9€ 20,40
10 - 19€ 18,60
20+€ 17,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

54 nC @ 4/15V

Height

21.1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more