SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

RS noliktavas nr.: 192-3367Ražotājs: WolfspeedRažotāja kods: C3M0016120K
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 81,00

Katrs (Tubina ir 30) (bez PVN)

€ 98,01

Katrs (Tubina ir 30) (Ieskaitot PVN)

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K

€ 81,00

Katrs (Tubina ir 30) (bez PVN)

€ 98,01

Katrs (Tubina ir 30) (Ieskaitot PVN)

SiC N-Channel MOSFET, 115 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0016120K
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

556 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

211 nC @ 4/15V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

23.6mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more