Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Produkta apraksts
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
€ 9,41
€ 0,941 Katrs (tiek piegadats Tubina) (bez PVN)
€ 11,39
€ 1,139 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 9,41
€ 0,941 Katrs (tiek piegadats Tubina) (bez PVN)
€ 11,39
€ 1,139 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
10 - 20 | € 0,941 | € 4,70 |
25 - 45 | € 0,867 | € 4,34 |
50 - 95 | € 0,798 | € 3,99 |
100+ | € 0,648 | € 3,24 |
Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Produkta apraksts