Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Izcelsmes valsts
China
Produkta apraksts
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
€ 15,25
€ 0,305 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,45
€ 0,369 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
50
€ 15,25
€ 0,305 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,45
€ 0,369 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
50
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.7 x 16mm
Izcelsmes valsts
China
Produkta apraksts