Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Produkta apraksts
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 76,00
€ 7,60 Katrs (tiek piegadats Tubina) (bez PVN)
€ 91,96
€ 9,20 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 76,00
€ 7,60 Katrs (tiek piegadats Tubina) (bez PVN)
€ 91,96
€ 9,20 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
10 - 24 | € 7,60 |
25 - 49 | € 6,90 |
50 - 99 | € 6,30 |
100+ | € 5,80 |
Tehniskie dokumenti
Specifikācija
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Produkta apraksts
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.