Vishay VS-GT175DA120U IGBT, 288 A 1200 V, 4-Pin SOT-227, Panel Mount
Tehniskie dokumenti
Specifikācija
Brand
VishayMaximum Continuous Collector Current
288 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.09 kW
Package Type
SOT-227
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
38.3 x 25.7 x 12.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Philippines
Produkta apraksts
IGBT Modules, Vishay
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 84,50
Katrs (bez PVN)
€ 102,24
Katrs (Ieskaitot PVN)
1
€ 84,50
Katrs (bez PVN)
€ 102,24
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 84,50 |
| 10 - 59 | € 76,00 |
| 60 - 99 | € 69,50 |
| 100 - 159 | € 67,00 |
| 160+ | € 65,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayMaximum Continuous Collector Current
288 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.09 kW
Package Type
SOT-227
Mounting Type
Panel Mount
Channel Type
N
Pin Count
4
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
38.3 x 25.7 x 12.3mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
Philippines
Produkta apraksts
IGBT Modules, Vishay
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products