Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

RS noliktavas nr.: 188-5143PRažotājs: VishayRažotāja kods: SUP60020E-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.01mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 185,00

€ 3,70 Katrs (tiek piegadats Tubina) (bez PVN)

€ 223,85

€ 4,477 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Izvēlēties iepakojuma veidu

€ 185,00

€ 3,70 Katrs (tiek piegadats Tubina) (bez PVN)

€ 223,85

€ 4,477 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cenaPer Penālis
50 - 120€ 3,70€ 18,50
125 - 245€ 3,45€ 17,25
250 - 495€ 3,25€ 16,25
500+€ 3,05€ 15,25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

80 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

151.2 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

9.01mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more