Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3

RS noliktavas nr.: 710-5014PRažotājs: VishayRažotāja kods: SUM110P06-08L-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 78,75

€ 3,15 Katrs (tiek piegadats Rulli) (bez PVN)

€ 95,29

€ 3,812 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
Izvēlēties iepakojuma veidu

€ 78,75

€ 3,15 Katrs (tiek piegadats Rulli) (bez PVN)

€ 95,29

€ 3,812 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK SUM110P06-08L-E3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
25 - 45€ 3,15€ 15,75
50 - 120€ 2,95€ 14,75
125 - 245€ 2,75€ 13,75
250+€ 2,20€ 11,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

160 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more