P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3

RS noliktavas nr.: 152-6380Ražotājs: VishayRažotāja kods: SUD50P06-15-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Forward Diode Voltage

-1.6V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,85

Katrs (Paka ir 5) (bez PVN)

€ 3,448

Katrs (Paka ir 5) (Ieskaitot PVN)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Izvēlēties iepakojuma veidu

€ 2,85

Katrs (Paka ir 5) (bez PVN)

€ 3,448

Katrs (Paka ir 5) (Ieskaitot PVN)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 2,85€ 14,25
50 - 120€ 2,60€ 13,00
125 - 245€ 2,45€ 12,25
250 - 495€ 2,15€ 10,75
500+€ 2,00€ 10,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.38mm

Forward Diode Voltage

-1.6V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more