P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3

RS noliktavas nr.: 146-4447Ražotājs: VishayRažotāja kods: SUD50P06-15-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.6V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,20

Katrs (Rulli ir 2000) (bez PVN)

€ 2,662

Katrs (Rulli ir 2000) (Ieskaitot PVN)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3

€ 2,20

Katrs (Rulli ir 2000) (bez PVN)

€ 2,662

Katrs (Rulli ir 2000) (Ieskaitot PVN)

P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252AA

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

113 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

-1.6V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more