Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
48 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
6.25mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.12mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,372
Katrs (Rulli ir 3000) (bez PVN)
€ 0,45
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,372
Katrs (Rulli ir 3000) (bez PVN)
€ 0,45
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
48 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
6.25mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.12mm
Minimum Operating Temperature
-55 °C
Produkta apraksts