P-Channel MOSFET, 4.1 A, 40 V, 3-Pin SOT-23 Vishay SQ2389ES-T1_GE3

RS noliktavas nr.: 180-7401Ražotājs: VishayRažotāja kods: SQ2389ES-T1_GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.188 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,398

Katrs (Rulli ir 3000) (bez PVN)

€ 0,482

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 4.1 A, 40 V, 3-Pin SOT-23 Vishay SQ2389ES-T1_GE3

€ 0,398

Katrs (Rulli ir 3000) (bez PVN)

€ 0,482

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 4.1 A, 40 V, 3-Pin SOT-23 Vishay SQ2389ES-T1_GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.188 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more