P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3

RS noliktavas nr.: 819-3901Ražotājs: VishayRažotāja kods: SQ2315ES-T1_GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,558

Katrs (Paka ir 20) (bez PVN)

€ 0,675

Katrs (Paka ir 20) (Ieskaitot PVN)

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Izvēlēties iepakojuma veidu

€ 0,558

Katrs (Paka ir 20) (bez PVN)

€ 0,675

Katrs (Paka ir 20) (Ieskaitot PVN)

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 180€ 0,558€ 11,16
200 - 480€ 0,447€ 8,94
500 - 980€ 0,363€ 7,26
1000 - 1980€ 0,28€ 5,60
2000+€ 0,224€ 4,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more