Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

RS noliktavas nr.: 200-6871Ražotājs: VishayRažotāja kods: SiZF360DT-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,922

Katrs (Rulli ir 3000) (bez PVN)

€ 1,116

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

€ 0,922

Katrs (Rulli ir 3000) (bez PVN)

€ 1,116

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV