Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3

RS noliktavas nr.: 204-7265Ražotājs: VishayRažotāja kods: SIZ998BDT-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

SiZ998BDT

Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,405

Katrs (Rulli ir 3000) (bez PVN)

€ 0,49

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3

€ 0,405

Katrs (Rulli ir 3000) (bez PVN)

€ 0,49

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

SiZ998BDT