Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3

RS noliktavas nr.: 200-6853Ražotājs: VishayRažotāja kods: SiZ240DT-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

47 A, 48 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAIR 3 x 3S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0133 Ω, 0.00805 Ω, 0.00841 Ω, 0.01225 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,25

Katrs (Paka ir 25) (bez PVN)

€ 1,512

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3

€ 1,25

Katrs (Paka ir 25) (bez PVN)

€ 1,512

Katrs (Paka ir 25) (Ieskaitot PVN)

Dual N-Channel MOSFET, 47 A, 48 A, 40 V, 8-Pin PowerPAIR 3 x 3S Vishay SiZ240DT-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 25€ 1,25€ 31,25
50 - 100€ 1,05€ 26,25
125 - 225€ 1,00€ 25,00
250 - 600€ 0,949€ 23,72
625+€ 0,886€ 22,15

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

47 A, 48 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAIR 3 x 3S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0133 Ω, 0.00805 Ω, 0.00841 Ω, 0.01225 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV