Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 94,20
€ 0,471 Katrs (tiek piegadats Rulli) (bez PVN)
€ 113,98
€ 0,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
200
€ 94,20
€ 0,471 Katrs (tiek piegadats Rulli) (bez PVN)
€ 113,98
€ 0,57 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
200
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 200 - 480 | € 0,471 | € 9,42 |
| 500 - 980 | € 0,417 | € 8,34 |
| 1000 - 1980 | € 0,358 | € 7,16 |
| 2000+ | € 0,298 | € 5,96 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products