Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF06DN-T1-GE3

RS noliktavas nr.: 204-7260Ražotājs: VishayRažotāja kods: SISF06DN-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

101 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8SCD

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

2

Series

SiSF06DN

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,10

Katrs (Paka ir 20) (bez PVN)

€ 1,331

Katrs (Paka ir 20) (Ieskaitot PVN)

Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF06DN-T1-GE3
Izvēlēties iepakojuma veidu

€ 1,10

Katrs (Paka ir 20) (bez PVN)

€ 1,331

Katrs (Paka ir 20) (Ieskaitot PVN)

Dual N-Channel MOSFET, 101 A, 30 V, 8-Pin PowerPAK 1212-8SCD Vishay SISF06DN-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 80€ 1,10€ 22,00
100 - 180€ 0,94€ 18,80
200 - 480€ 0,776€ 15,52
500 - 980€ 0,664€ 13,28
1000+€ 0,609€ 12,18

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

101 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8SCD

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

2

Series

SiSF06DN