P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

RS noliktavas nr.: 814-1304PRažotājs: VishayRažotāja kods: SIS415DNT-T1-GE3
brand-logo
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,252

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,305

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,252

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,305

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more