Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3

RS noliktavas nr.: 787-9367PRažotājs: VishayRažotāja kods: SIRA00DP-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

147 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Produkta apraksts

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 115,00

€ 2,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 139,15

€ 2,783 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Izvēlēties iepakojuma veidu

€ 115,00

€ 2,30 Katrs (tiek piegadats Rulli) (bez PVN)

€ 139,15

€ 2,783 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
50 - 120€ 2,30€ 11,50
125 - 245€ 2,10€ 10,50
250 - 495€ 1,95€ 9,75
500+€ 1,85€ 9,25

Ideate. Create. Collaborate

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No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

147 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Produkta apraksts

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more