Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Produkta apraksts
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,885
Katrs (Paka ir 5) (bez PVN)
€ 1,071
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,885
Katrs (Paka ir 5) (bez PVN)
€ 1,071
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Produkta apraksts