N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR158DP-T1-RE3

RS noliktavas nr.: 134-9157Ražotājs: VishayRažotāja kods: SIR158DP-T1-RE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.12mm

Produkta apraksts

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR158DP-T1-RE3

€ 1,05

Katrs (Rulli ir 3000) (bez PVN)

€ 1,27

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR158DP-T1-RE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.12mm

Produkta apraksts

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more