Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SC-70
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
2.15mm
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 885,00
€ 0,295 Katrs (Rulli ir 3000) (bez PVN)
€ 1 070,85
€ 0,357 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 885,00
€ 0,295 Katrs (Rulli ir 3000) (bez PVN)
€ 1 070,85
€ 0,357 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK SC-70
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
2.15mm
Length
2.15mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.75mm
Izcelsmes valsts
China
Produkta apraksts