Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Width
3.05mm
Minimum Operating Temperature
-65 °C
Height
1.04mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (Paka ir 5) (bez PVN)
€ 1,27
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,05
Katrs (Paka ir 5) (bez PVN)
€ 1,27
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 1,05 | € 5,25 |
50 - 245 | € 0,735 | € 3,68 |
250 - 495 | € 0,651 | € 3,26 |
500 - 1245 | € 0,549 | € 2,74 |
1250+ | € 0,495 | € 2,48 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.05mm
Width
3.05mm
Minimum Operating Temperature
-65 °C
Height
1.04mm
Izcelsmes valsts
China
Produkta apraksts