Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3

RS noliktavas nr.: 818-1365Ražotājs: VishayRažotāja kods: SI5997DU-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Height

0.85mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,325

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,393

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3

€ 0,325

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,393

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Lente
20 - 180€ 0,325€ 6,50
200 - 380€ 0,29€ 5,80
400+€ 0,286€ 5,72

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Height

0.85mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more