Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Series
TrenchFET
Izcelsmes valsts
China
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,432
Katrs (Rulli ir 3000) (bez PVN)
€ 0,523
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,432
Katrs (Rulli ir 3000) (bez PVN)
€ 0,523
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Series
TrenchFET
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products