N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,523
Katrs (Paka ir 10) (bez PVN)
€ 0,633
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,523
Katrs (Paka ir 10) (bez PVN)
€ 0,633
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 0,523 | € 5,23 |
| 50 - 140 | € 0,497 | € 4,97 |
| 150 - 740 | € 0,40 | € 4,00 |
| 750 - 1490 | € 0,33 | € 3,30 |
| 1500+ | € 0,263 | € 2,63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Produkta apraksts
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products