Vishay TrenchFET N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 SI4896DY-T1-E3

RS noliktavas nr.: 180-7296Ražotājs: VishayRažotāja kods: SI4896DY-T1-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.5 A

Maximum Drain Source Voltage

80 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.022 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 250,00

€ 1,30 Katrs (Rulli ir 2500) (bez PVN)

€ 3 932,50

€ 1,573 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Vishay TrenchFET N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 SI4896DY-T1-E3

€ 3 250,00

€ 1,30 Katrs (Rulli ir 2500) (bez PVN)

€ 3 932,50

€ 1,573 Katrs (Rulli ir 2500) (Ieskaitot PVN)

Vishay TrenchFET N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 SI4896DY-T1-E3
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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.5 A

Maximum Drain Source Voltage

80 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.022 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more