Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC
Width
4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.55mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,80
Katrs (Paka ir 5) (bez PVN)
€ 2,178
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,80
Katrs (Paka ir 5) (bez PVN)
€ 2,178
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 45 | € 1,80 | € 9,00 |
50 - 120 | € 1,60 | € 8,00 |
125 - 245 | € 1,55 | € 7,75 |
250 - 495 | € 1,45 | € 7,25 |
500+ | € 1,35 | € 6,75 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
17 nC
Width
4mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.55mm
Izcelsmes valsts
China