N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3

RS noliktavas nr.: 152-6374Ražotājs: VishayRažotāja kods: SI4848DY-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC

Width

4mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.55mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,80

Katrs (Paka ir 5) (bez PVN)

€ 2,178

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3
Izvēlēties iepakojuma veidu

€ 1,80

Katrs (Paka ir 5) (bez PVN)

€ 2,178

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 1,80€ 9,00
50 - 120€ 1,60€ 8,00
125 - 245€ 1,55€ 7,75
250 - 495€ 1,45€ 7,25
500+€ 1,35€ 6,75

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC

Width

4mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.55mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more