N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC Vishay SI4800BDY-T1-E3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Katrs (tiek piegadats Rulli) (bez PVN)
Industriālais iepakojums (Rullis)
10
P.O.A.
Katrs (tiek piegadats Rulli) (bez PVN)
Industriālais iepakojums (Rullis)
10
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Lūdzu pārbaudiet vēlreiz vēlāk
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products