Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,841
Katrs (Paka ir 20) (bez PVN)
€ 1,018
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,841
Katrs (Paka ir 20) (bez PVN)
€ 1,018
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 180 | € 0,841 | € 16,82 |
200 - 480 | € 0,647 | € 12,94 |
500 - 980 | € 0,546 | € 10,92 |
1000 - 1980 | € 0,504 | € 10,08 |
2000+ | € 0,421 | € 8,42 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts