Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,974
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,179
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
€ 0,974
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,179
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
20 - 80 | € 0,974 | € 19,48 |
100 - 180 | € 0,78 | € 15,60 |
200 - 480 | € 0,74 | € 14,80 |
500 - 980 | € 0,702 | € 14,04 |
1000+ | € 0,662 | € 13,24 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts