N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,726
Katrs (Paka ir 5) (bez PVN)
€ 0,878
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,726
Katrs (Paka ir 5) (bez PVN)
€ 0,878
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Ideate. Create. Collaborate
JOIN FOR FREE
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.5mm
Produkta apraksts
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products