N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC Vishay SI4178DY-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,597
Katrs (Paka ir 20) (bez PVN)
€ 0,722
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,597
Katrs (Paka ir 20) (bez PVN)
€ 0,722
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 20 - 180 | € 0,597 | € 11,94 |
| 200 - 480 | € 0,477 | € 9,54 |
| 500 - 980 | € 0,447 | € 8,94 |
| 1000 - 1980 | € 0,388 | € 7,76 |
| 2000+ | € 0,323 | € 6,46 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products