Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3

RS Stock No.: 787-9131Brand: VishayManufacturers Part No.: SI4090DY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 6.25

€ 1.25 Each (In a Pack of 5) (Exc. Vat)

€ 7.56

€ 1.512 Each (In a Pack of 5) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3
Select packaging type

€ 6.25

€ 1.25 Each (In a Pack of 5) (Exc. Vat)

€ 7.56

€ 1.512 Each (In a Pack of 5) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 20 A, 100 V, 8-Pin SOIC SI4090DY-T1-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 45€ 1.25€ 6.25
50 - 120€ 1.20€ 6.00
125 - 245€ 0.91€ 4.55
250 - 495€ 0.752€ 3.76
500+€ 0.592€ 2.96

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

ThunderFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

7.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

45.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more