N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

RS noliktavas nr.: 152-6369Ražotājs: VishayRažotāja kods: SI3476DV-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Width

1.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1mm

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,479

Katrs (Paka ir 25) (bez PVN)

€ 0,58

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,479

Katrs (Paka ir 25) (bez PVN)

€ 0,58

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 225€ 0,479€ 11,98
250 - 600€ 0,451€ 11,28
625 - 1225€ 0,407€ 10,18
1250 - 2475€ 0,383€ 9,58
2500+€ 0,36€ 9,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Width

1.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more