P-Channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP-6 Vishay SI3457CDV-T1-GE3

RS noliktavas nr.: 152-6364Ražotājs: VishayRažotāja kods: SI3457CDV-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,476

Katrs (Paka ir 25) (bez PVN)

€ 0,576

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP-6 Vishay SI3457CDV-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,476

Katrs (Paka ir 25) (bez PVN)

€ 0,576

Katrs (Paka ir 25) (Ieskaitot PVN)

P-Channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP-6 Vishay SI3457CDV-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 225€ 0,476€ 11,90
250 - 600€ 0,447€ 11,18
625 - 1225€ 0,429€ 10,72
1250 - 2475€ 0,381€ 9,52
2500+€ 0,358€ 8,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-3V

Minimum Gate Threshold Voltage

-1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more