Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
30 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 8,14
€ 0,407 Katrs (Paka ir 20) (bez PVN)
€ 9,85
€ 0,492 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 8,14
€ 0,407 Katrs (Paka ir 20) (bez PVN)
€ 9,85
€ 0,492 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 180 | € 0,407 | € 8,14 |
200 - 480 | € 0,306 | € 6,12 |
500 - 980 | € 0,252 | € 5,04 |
1000 - 1980 | € 0,204 | € 4,08 |
2000+ | € 0,192 | € 3,84 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
30 nC @ 8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts