Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,326
Katrs (Paka ir 50) (bez PVN)
€ 0,394
Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 0,326
Katrs (Paka ir 50) (bez PVN)
€ 0,394
Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 450 | € 0,326 | € 16,30 |
500 - 1200 | € 0,229 | € 11,45 |
1250 - 2450 | € 0,18 | € 9,00 |
2500 - 4950 | € 0,163 | € 8,15 |
5000+ | € 0,13 | € 6,50 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts