Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3

RS noliktavas nr.: 710-3263Ražotājs: VishayRažotāja kods: SI2325DS-T1-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

530 mA

Maximum Drain Source Voltage

150 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 4,94

€ 0,988 Katrs (Paka ir 5) (bez PVN)

€ 5,98

€ 1,195 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3
Izvēlēties iepakojuma veidu

€ 4,94

€ 0,988 Katrs (Paka ir 5) (bez PVN)

€ 5,98

€ 1,195 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay P-Channel MOSFET, 530 mA, 150 V, 3-Pin SOT-23 SI2325DS-T1-E3

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Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

530 mA

Maximum Drain Source Voltage

150 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more