Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
24 nC @ 8 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,70
€ 0,385 Katrs (Paka ir 20) (bez PVN)
€ 9,32
€ 0,466 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 7,70
€ 0,385 Katrs (Paka ir 20) (bez PVN)
€ 9,32
€ 0,466 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 180 | € 0,385 | € 7,70 |
200 - 480 | € 0,286 | € 5,72 |
500 - 980 | € 0,239 | € 4,78 |
1000 - 1980 | € 0,212 | € 4,24 |
2000+ | € 0,158 | € 3,16 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
24 nC @ 8 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts