N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3

RS noliktavas nr.: 152-6358Ražotājs: VishayRažotāja kods: SI2302DDS-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,434

Katrs (Paka ir 25) (bez PVN)

€ 0,525

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,434

Katrs (Paka ir 25) (bez PVN)

€ 0,525

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 225€ 0,434€ 10,85
250 - 600€ 0,409€ 10,22
625 - 1225€ 0,369€ 9,22
1250 - 2475€ 0,347€ 8,68
2500+€ 0,326€ 8,15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more