Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC
Width
1.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,345
Katrs (Paka ir 25) (bez PVN)
€ 0,417
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,345
Katrs (Paka ir 25) (bez PVN)
€ 0,417
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC
Width
1.4mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm