Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,406
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,491
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
€ 0,406
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,491
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
20 - 180 | € 0,406 | € 8,12 |
200 - 480 | € 0,324 | € 6,48 |
500 - 980 | € 0,244 | € 4,88 |
1000 - 1980 | € 0,203 | € 4,06 |
2000+ | € 0,183 | € 3,66 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Izcelsmes valsts
China
Produkta apraksts