Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Width
1.25mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,243
Katrs (Paka ir 10) (bez PVN)
€ 0,294
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,243
Katrs (Paka ir 10) (bez PVN)
€ 0,294
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-70)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Width
1.25mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Izcelsmes valsts
China
Produkta apraksts