N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3

RS noliktavas nr.: 812-3035Ražotājs: VishayRažotāja kods: SI1050X-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Width

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Produkta apraksts

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,155

Katrs (Paka ir 20) (bez PVN)

€ 0,188

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,155

Katrs (Paka ir 20) (bez PVN)

€ 0,188

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Width

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Produkta apraksts

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more